(China (Mainland))
Product Summary
The TLP705(TP,F) Photocoupler consists of a GaAlAs light emitting diode and a integrated photodetector. This unit is 6-lead SDIP package. The TLP705(TP,F) is 50% smaller than 8pin DIP and has suited the safety standard reinforced insulation class. So mounting area in safety standard required equipment can be reduced. The TLP705(TP,F) is suitable for gate driving circuit of IGBT or power MOS FET. Especially TLP705(TP,F) is capable of “direct” gate drive of lower Power IGBTs.
Parametrics
TLP705(TP,F) absolute maximum ratings: (1)Forward current, IF: 20 mA; (2)Peak transient forward current, IFP: 1 A; (3)Reverse voltage, VR: 5 V; (4)“H” peak output current, IOPH: -0.45 A; (5)“L” peak output current, IOPL: 0.45 A; (6)Output voltage, VO: 25 V; (7)Supply voltage, VCC: 25 V; (8)Operating frequency, f: 250 kHz; (9)Storage temperature range, Tstg: -55 to 125℃; (10)Operating temperature range, Topr: -40 to 100℃; (11)Lead soldering temperature (10 s), Tsol: 260℃; (12)Isolation voltage (AC, 1 minute, R.H. ≤ 60%), BVS: 5000 Vrms.
Features
TLP705(TP,F) features: (1)Peak output current: ±45 A (max); (2)Operating frequency: 250kHz (max); (3)Guaranteed performance over temperature: -40 to 100℃; (4)Supply current: 3mA (max); (5)Power supply voltage: 10 to 20 V; (6)Threshold input current: IFLH = 8 mA (max); (7)Switching time (tpLH / tpHL): 200 ns (max); (8)Common mode transient immunity: ±10 kV/μs(min); (9)Isolation voltage: 5000 Vrms(min); (10)UL Recognized :UL1577, File No.E67349.
Diagrams
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 TLP705(TP,F) |
Toshiba |
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Data Sheet |
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