HIP6602BCR

two power channel MOSFET driver, 16-QFN, 15V, 30ns, HIP6602BCR

Rated 5 Rating 5 | reviews | Write a review

Price:: US $0.80~1.05 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
	US $0.80~1.05

PartNumber:: HIP6602BCR

Brand:: Intersil Corporation - Intersil | Pack: QFN | D/C: 09+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

Place Order via Escrow Service

Sold By

Mr. DAVE's store

(China (Mainland))

add to my favourite

100% Positive feedback

Detailed seller ratings

Visit Store

Contact Now

Esrcow Service

Place orders confidently and securely via it

Safe payments
Quick and easy transactions
Free service charges

Learn More >>

Previous Next

Products Upload time: 2012-06-07

From Other Seller

Part Number:HIP6602BCR
US $0.80 - 1.05
LM285M-2.5

US $0.16 - 0.25 / Piece
(0) Remove
MJ16018

US $1.80 - 2.50 / Piece
(0) Remove
Quantity:

piece

Product Summary

The HIP6602BCR is a high frequency, two power channel MOSFET driver specifically designed to drive four power N-Channel MOSFETs in a synchronous rectified buck converter topology. The HIP6602BCR is available in either a 14-lead SOIC or a 16-lead QFN package with a PAD to thermally enhance the package. These drivers combined with a HIP63xx or ISL65xx series of Multi-Phase Buck PWM controllers and MOSFETs form a complete core voltage regulator solution for advanced microprocessors. The HIP6602BCR is ideal for: (1)Core Voltage Supplies for Intel Pentium III and AMD AthlonTM Microprocessors; (2)High-Frequency, Low-Profile DC-DC Converters; (3)High-Current, Low-Voltage DC-DC Converters.

Parametrics

HIP6602BCR absolute maximum ratings: (1)Supply Voltage (VCC): 15V; (2)Supply Voltage (PVCC): VCC + 0.3V; (3)BOOT Voltage (VBOOT - VPHASE): 15V; (4)Input Voltage (VPWM): GND - 0.3V to 7V; (5)UGATE: VPHASE - 5V(<400ns pulse width) to VBOOT + 0.3V; VPHASE -0.3V(>400ns pulse width) to VBOOT + 0.3V; (6)LGATE: GND - 5V(<400ns pulse width) to VPVCC + 0.3V; GND -0.3V(>400ns pulse width) to VPVCC + 0.3V; (7)PHASE: GND -5V(<400ns pulse width) to 15V; GND -0.3V(>400ns pulse width) to 15V; (8)ESD Rating: Human Body Model (Per MIL-STD-883 Method 3015.7): 3kV; Machine Model (Per EIAJ ED-4701 Method C-111): 200V.

Features

HIP6602BCR features: (1)Drives Four N-Channel MOSFETs; (2)Adaptive Shoot-Through Protection; (3)Internal Bootstrap Devices; (4)Supports High Switching Frequency: Fast Output Rise Time; Propagation Delay 30ns; (5)Small 14-Lead SOIC Package; (6)Smaller 16-Lead QFN Thermally Enhanced Package; (7)5V to 12V Gate-Drive Voltages for Optimal Efficiency; (8)Three-State Input for Bridge Shutdown; (9)Supply Undervoltage Protection; (10)QFN Package.