(China (Mainland))
Product Summary
Capitalizing on two-bit-per-cell technology, the DT28F320J5A-120 5 Volt Intel StrataFlash memory provides 2Xthe bits in 1Xthe space. Offered in 64-Mbit (8-Mbyte) and 32-Mbit (4-Mbyte) densities, Intel StrataFlash memory devices are the first to bring reliable, two-bit-per-cell storage technology to the flash market. The Intel StrataFlash memory DT28F320J5A-120 benefits include: more density in less space, lowest cost-per-bit NOR devices, support for code and data storage, and easy migration to future devices. The Intel StrataFlash memory DT28F320J5A-120 delivers a new generation of forward-compatible software support. By using the Common Flash Interface (CFI) and the Scalable Command Set (SCS), customers can take advantage of density upgrades and optimized write capabilities of future Intel StrataFlash memory devices.
Parametrics
DT28F320J5A-120 absolute maximum ratings: (1)Temperature under Bias Expanded: –20 ℃ to +70 ℃; (2)Storage Temperature: –65 ℃ to +125 ℃; (3)Voltag e On Any Pin (except RP#): –2.0 V to +7.0 V; (4)RP# Voltage with Respect to GND during Lock-Bit Configuration Operations: –2.0 V to +14.0 V; (5)Output Short Circuit Current: 100 mA.
Features
DT28F320J5A-120 features: (1)High-Density Symmetrically-Blocked Architecture; (2)4.5 V–5.5 V VCC Operation; (3)120 ns Read Access Time (32 M); 150 ns Read Access Time (64 M); (4)Enhanced Data Protection Features; (5)Industry-Standard Packaging: SSOP Package (32, 64 M); TSOP Package (32 M); (6)Cross-Compatible Command Support; (7)32-Byte Write Buffer; (8)6,400,000 Total Erase Cycles (64 M); 3,200,000 Total Erase Cycles (32 M); (9)Automation Suspend Options; (10)System Performance Enhancements; (11)Operating Temperature –20 ℃ to + 85 ℃ (–40 ℃ to +85 ℃ on .25 micron ETOXVI) process technology parts).
Diagrams
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